Laser-induced tuning of graphene field-effect transistors for pH sensing
Lampinen, A., See, E., Emelianov, A., Myllyperkiö, P., Johansson, A., & Pettersson, M. (2023). Laser-induced tuning of graphene field-effect transistors for pH sensing. Physical Chemistry Chemical Physics, 25(15), 10778-10784. https://doi.org/10.1039/d3cp00359k
Published in
Physical Chemistry Chemical PhysicsAuthors
Date
2023Copyright
© Authors 2023
Here we demonstrate, using pulsed femtosecond laser-induced two-photon oxidation (2PO), a novel method of locally tuning the sensitivity of solution gated graphene field-effect transistors (GFETs) without sacrificing the integrity of the carbon network of chemical vapor deposition (CVD) grown graphene. The achieved sensitivity with 2PO was (25 ± 2) mV pH−1 in BIS-TRIS propane HCl (BTPH) buffer solution, when the oxidation level corresponded to the Raman peak intensity ratio I(D)/I(G) of 3.58. Sensitivity of non-oxidized, residual PMMA contaminated GFETs was 20–22 mV pH−1. The sensitivity decreased initially by 2PO to (19 ± 2) mV pH−1 (I(D)/I(G) = 0.64), presumably due to PMMA residue removal by laser irradiation. 2PO results in local control of functionalization of the CVD-grown graphene with oxygen-containing chemical groups enhancing the performance of the GFET devices. The GFET devices were made HDMI compatible to enable easy coupling with external devices for enhancing their applicability.
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Publisher
Royal Society of ChemistryISSN Search the Publication Forum
1463-9076
Original source
http://dx.doi.org/10.1039/d3cp00359kPublication in research information system
https://converis.jyu.fi/converis/portal/detail/Publication/182757238
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Additional information about funding
We thank for the research funding provided by Emil Aaltonen foundation and Jane and Aatos Erkko foundation.License
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