Different faces of the Japanese distribution system : low voltage AC drives
Related items
Showing items with similar title or keywords.
-
The effects of different combinations of fixed and moving bed bioreactors on rainbow trout (Oncorhynchus mykiss) growth and health, water quality and nitrification in recirculating aquaculture systems
Pulkkinen, Jani T.; Eriksson-Kallio, Anna M.; Aalto, Sanni L.; Tiirola, Marja; Koskela, Juha; Kiuru, Tapio; Vielma, Jouni (Elsevier BV, 2019)The effect of bioreactor design on nitrification efficiency has been well studied, but less is known about the overall impacts on water quality. Besides nitrification, submerged fixed bed bioreactors (FBBR) trap fine solid ... -
Local culture in the context of international tourism : Japanese tourists' perceptions of the culture of Saariselkä and the views of Japanese travel agents
Aoyagi, Takumi (2012)In tourism, cultures are often used as resources to attract tourists. This is because tourism is generated by difference. So that the culture of a tourist destination can be consumed by tourists the culture needs to go ... -
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
Witulski, A. F.; Arslanbekov, R.; Raman, A.; Schrimpf, R. D.; Sternberg, A.; Galloway, K. F.; Javanainen, Arto; Grider, D.; Lichtenwalner, D. J.; Hull, B. (Institute of Electrical and Electronics Engineers, 2018)Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current ... -
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ...