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dc.contributor.authorHeiskanen, Samuli
dc.contributor.authorGeng, Zhuoran
dc.contributor.authorMastomäki, Jaakko
dc.contributor.authorMaasilta, Ilari J.
dc.date.accessioned2020-02-28T13:38:38Z
dc.date.available2020-02-28T13:38:38Z
dc.date.issued2020
dc.identifier.citationHeiskanen, S., Geng, Z., Mastomäki, J., & Maasilta, I. J. (2020). Nanofabrication on 2D and 3D Topography via Positive‐Tone Direct‐Write Laser Lithography. <i>Advanced Engineering Materials</i>, <i>22</i>(2), Article 1901290. <a href="https://doi.org/10.1002/adem.201901290" target="_blank">https://doi.org/10.1002/adem.201901290</a>
dc.identifier.otherCONVID_33601193
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/68006
dc.description.abstractDirect laser writing (DLW) lithography using two‐photon absorption is a powerful technique mostly used for fabrication of complex structures in micro‐ and nanoscale, by photopolymerizing a negative‐tone resist. In contrast, in this study it is demonstrated that DLW is also well suited for fabricating nano‐ to microscale metallic structures using lift‐off and a positive‐tone photoresist. It is shown first that versatile, fast and large area fabrication is possible on flat two‐dimensional insulating substrates, and an expression for how the line width varies with the scanning speed is derived, with excellent agreement with the experiments. Even more interestingly, a unique application for the DLW lift‐off process is demonstrated, by fabricating sub‐micron scale metallic wiring on uneven substrates with sloping elevation changes as high as 20 µm. Such fabrication is practically impossible with more standard lithographic techniques.en
dc.format.mimetypeapplication/pdf
dc.languageeng
dc.language.isoeng
dc.publisherWiley-VCH Verlag
dc.relation.ispartofseriesAdvanced Engineering Materials
dc.rightsIn Copyright
dc.subject.otherdirect laser writing
dc.subject.otherlift‐off nanofabrication
dc.subject.otherpositive‐tone resist
dc.subject.othertwo‐photon absorption
dc.titleNanofabrication on 2D and 3D Topography via Positive‐Tone Direct‐Write Laser Lithography
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-202002282229
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineNanoscience Centerfi
dc.contributor.oppiaineNanoscience Centeren
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn1438-1656
dc.relation.numberinseries2
dc.relation.volume22
dc.type.versionacceptedVersion
dc.rights.copyright© 2019 WILEY‐VCH Verlag GmbH & Co. KGaA
dc.rights.accesslevelopenAccessfi
dc.relation.grantnumber298667
dc.subject.ysonanorakenteet
dc.subject.ysolasertekniikka
dc.subject.ysonanotekniikka
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p25315
jyx.subject.urihttp://www.yso.fi/onto/yso/p20011
jyx.subject.urihttp://www.yso.fi/onto/yso/p11463
dc.rights.urlhttp://rightsstatements.org/page/InC/1.0/?language=en
dc.relation.doi10.1002/adem.201901290
dc.relation.funderResearch Council of Finlanden
dc.relation.funderSuomen Akatemiafi
jyx.fundingprogramAcademy Project, AoFen
jyx.fundingprogramAkatemiahanke, SAfi
jyx.fundinginformationAcademy of Finland. Grant Number: 298667
dc.type.okmA1


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