Status of new 18 GHz ECRIS HIISI
Kalvas, T., Koivisto, H., & Tarvainen, O. (2018). Status of new 18 GHz ECRIS HIISI. In J. Lettry, E. Mahner, B. Marsh, R. Pardo, & R. Scrivens (Eds.), Proceedings of the 17th International Conference on Ion Sources (Article 040006). AIP Publishing. AIP Conference Proceedings, 2011. https://doi.org/10.1063/1.5053280
Published inAIP Conference Proceedings
© AIP Publishing, 2018
A new 18 GHz ECR ion source HIISI is under commissioning at the Accelerator Laboratory at the University of Jyväskylä (JYFL). The main purpose of HIISI is to produce high-energy beam cocktails, e.g. Xe44+, for radiation effects testing of electronics with the K130 cyclotron. The initial commissioning results in 18+14 GHz operation with oxygen, argon and xenon are reported. The beam currents are compared to those produced by reference ion sources (JYFL 14 GHz ECRIS, GTS and SuSI). At the moment (October 2017) 560 µA of O6+ and 310 µA of Ar13+, for example, have been reached with HIISI at 2.3 kW total power.
Parent publication ISBN978-0-7354-1727-4
ConferenceInternational Conference on Ion Sources
Is part of publicationProceedings of the 17th International Conference on Ion Sources
Publication in research information system
MetadataShow full item record
Related funder(s)European Commission
The content of the publication reflects only the author’s view. The funder is not responsible for any use that may be made of the information it contains.
Additional information about fundingThe project has received funding from the European Unions Horizon 2020 research and innovation programme under grant agreement No 654002, from the Academy of Finland under the Finnish Centre of Excellence Programme 2012– 2017 (Nuclear and Accelerator Based Physics Research at JYFL) and under FIRI grant agreement No 273526. This work has been funded also by the European Space Research and Technology Centre, European Space Agency, under ESA/GSTP ESTEC/Contract No. 4000112736/14/NL/PA. ...
Showing items with similar title or keywords.
Koivisto, Hannu; Tarvainen, Olli; Kalvas, Taneli; Ranttila, Kimmo; Heikkinen, Pauli; Xie, D.; Machicoane, G.; Thuillier, T.; Skalyga, V.; Izotov, I. (Institute of Applied Physics of the Russian Academy of Sciences, 2014)At the end of 2013 the Academy of Finland granted an infrastructure funding for the JYFL Accelerator Laboratory in order to increase beam intensities for the international user community. The primary objective is ...
Kalvas, Taneli; Tarvainen, Olli; Koivisto, Hannu; Ranttila, Kimmo (Institute of Applied Physics of the Russian Academy of Sciences, 2014)A project is underway for constructing a new 18 GHz ECR ion source HIISI at University of Jyväskylä. An innovative plasma chamber structure with grooves at magnetic poles for larger chamber radius at poles. The hexapole ...
Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operation Lettry, J.; Alessi, J.; Faircloth, D.; Gerardin, A.; Kalvas, Taneli; Pereira, H.; Sgobba, S. (American Institute of Physics, 2012)Linac4 accelerator of Centre Européen de Recherches Nucléaires is under construction and a RFdriven H− ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. ...
Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Kastriotou, Maria; Kettunen, Heikki; Santin, Giovanni; Polo, Cesar Boatella; Tsiligiannis, Georgios; Danzeca, Salvatore; Virtanen, Ari (IEEE, 2018)In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs ...
Tali, Maris; Alía, Rubéen García; Brugger, Markus; Ferlet-Cavrois, Veronique; Corsini, Roberto; Farabolini, Wilfrid; Javanainen, Arto; Santin, Giovanni; Polo, Cesar Boatella; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2019)In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this ...