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dc.contributor.authorvan Dorp, Dennis H.
dc.contributor.authorArnauts, Sophia
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorConard, Thierry
dc.contributor.authorKelly, John J.
dc.date.accessioned2018-10-17T07:12:56Z
dc.date.available2021-02-01T22:35:10Z
dc.date.issued2019
dc.identifier.citationvan Dorp, D. H., Arnauts, S., Laitinen, M., Sajavaara, T., Meersschaut, J., Conard, T., & Kelly, J. J. (2019). Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry. <i>Applied Surface Science</i>, <i>465</i>, 596-606. <a href="https://doi.org/10.1016/j.apsusc.2018.09.181" target="_blank">https://doi.org/10.1016/j.apsusc.2018.09.181</a>
dc.identifier.otherCONVID_28286248
dc.identifier.otherTUTKAID_78971
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/59848
dc.description.abstractIn this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular the marked difference in etch rate and the contrasting role of chloride in the dissolution of the two semiconductors. A critical factor in determining the surface chemistry is considered to be the ease with which a proton can be removed from the group V hydroxide, which is formed in the initial etching step (the breaking of the III-V surface bond).fi
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier BV
dc.relation.ispartofseriesApplied Surface Science
dc.rightsCC BY-NC-ND 4.0
dc.subject.othernanoscale etching
dc.subject.otherGaAs
dc.subject.otherInP
dc.subject.otherIII-V oxide
dc.titleNanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201810024294
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-10-02T12:15:07Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange596-606
dc.relation.issn0169-4332
dc.relation.numberinseries0
dc.relation.volume465
dc.type.versionacceptedVersion
dc.rights.copyright© 2018 Elsevier B.V.
dc.rights.accesslevelopenAccessfi
dc.subject.ysonanoelektroniikka
dc.subject.ysopuolijohteet
dc.subject.ysopintakemia
dc.subject.ysoreaktiomekanismit
dc.format.contentfulltext
jyx.subject.urihttp://www.yso.fi/onto/yso/p26991
jyx.subject.urihttp://www.yso.fi/onto/yso/p18256
jyx.subject.urihttp://www.yso.fi/onto/yso/p15067
jyx.subject.urihttp://www.yso.fi/onto/yso/p21536
dc.rights.urlhttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.relation.doi10.1016/j.apsusc.2018.09.181
dc.type.okmA1


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