dc.contributor.author | Javanainen, Arto | |
dc.contributor.author | Muinos, Henrique Vazquez | |
dc.contributor.author | Nordlund, Kai | |
dc.contributor.author | Galloway, Kenneth F. | |
dc.contributor.author | Turowski, Marek | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.date.accessioned | 2018-09-24T10:39:29Z | |
dc.date.available | 2018-09-24T10:39:29Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>18</i>(3), 481-483. <a href="https://doi.org/10.1109/TDMR.2018.2842253" target="_blank">https://doi.org/10.1109/TDMR.2018.2842253</a> | |
dc.identifier.other | CONVID_28089623 | |
dc.identifier.other | TUTKAID_77833 | |
dc.identifier.uri | https://jyx.jyu.fi/handle/123456789/59634 | |
dc.description.abstract | Heavy ion irradiation increases the leakage current
in reverse-biased SiC Schottky diodes. This work demonstrates,
via molecular dynamics simulations, that a combination of bias
and ion-deposited energy is required to produce the degradation | fi |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers | |
dc.relation.ispartofseries | IEEE Transactions on Device and Materials Reliability | |
dc.rights | In Copyright | |
dc.subject.other | ion radiation effects | |
dc.subject.other | modeling | |
dc.subject.other | power semiconductor devices, | |
dc.subject.other | Schottky diodes | |
dc.subject.other | silicon carbide | |
dc.title | Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes | |
dc.type | article | |
dc.identifier.urn | URN:NBN:fi:jyu-201809064031 | |
dc.contributor.laitos | Fysiikan laitos | fi |
dc.contributor.laitos | Department of Physics | en |
dc.contributor.oppiaine | Kiihdytinlaboratorio | fi |
dc.contributor.oppiaine | Accelerator Laboratory | en |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | |
dc.date.updated | 2018-09-06T06:15:18Z | |
dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | |
dc.description.reviewstatus | peerReviewed | |
dc.format.pagerange | 481-483 | |
dc.relation.issn | 1530-4388 | |
dc.relation.numberinseries | 3 | |
dc.relation.volume | 18 | |
dc.type.version | acceptedVersion | |
dc.rights.copyright | @ IEEE, 2018. | |
dc.rights.accesslevel | openAccess | fi |
dc.subject.yso | ionit | |
dc.subject.yso | ionisoiva säteily | |
dc.subject.yso | mallintaminen | |
dc.subject.yso | puolijohteet | |
dc.format.content | fulltext | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p9015 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p459 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p3533 | |
jyx.subject.uri | http://www.yso.fi/onto/yso/p18256 | |
dc.rights.url | http://rightsstatements.org/page/InC/1.0/?language=en | |
dc.relation.doi | 10.1109/TDMR.2018.2842253 | |
dc.type.okm | A1 | |