Ultra-flat giant grain Cu film atop α-Al2O3 (0001) for apCVD synthesis of graphene
Abstract
Graphene microelectronic devices are still in the research phase. Consistent production of such small-scale structures requires increasingly higher quality graphene. Commonly, graphene is grown by chemical vapor deposition (CVD) on the surface of a substrate catalyst. Defects on the catalyst are known to generate corresponding defects in the CVD graphene grown atop it. The current study seeks to produce a wafer scale single-crystal Cu thin film supported by Al2O3 which is durable enough for apCVD graphene production.
Main Author
Format
Theses
Master thesis
Published
2018
Subjects
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201808023715Käytä tätä linkitykseen.
Language
English
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