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dc.contributor.authorRontu, Ville
dc.contributor.authorSippola, Perttu
dc.contributor.authorBroas, Mikael
dc.contributor.authorRoss, Glenn
dc.contributor.authorSajavaara, Timo
dc.contributor.authorLipsanen, Harri
dc.contributor.authorPaulasto-Kröckel, Mervi
dc.contributor.authorFranssila, Sami
dc.date.accessioned2018-01-26T09:25:43Z
dc.date.available2019-02-03T22:35:44Z
dc.date.issued2018
dc.identifier.citationRontu, V., Sippola, P., Broas, M., Ross, G., Sajavaara, T., Lipsanen, H., Paulasto-Kröckel, M., & Franssila, S. (2018). Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma. <i>Journal of Vacuum Science and Technology A</i>, <i>36</i>(2), Article 021508. <a href="https://doi.org/10.1116/1.5003381" target="_blank">https://doi.org/10.1116/1.5003381</a>
dc.identifier.otherCONVID_27860010
dc.identifier.otherTUTKAID_76587
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/56914
dc.description.abstractThe atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4 Å vs 0.7 Å). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.
dc.language.isoeng
dc.publisherAIP Publishing
dc.relation.ispartofseriesJournal of Vacuum Science and Technology A
dc.subject.othercrystal structure
dc.subject.otherpiezoelectric films
dc.titleAtomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201801241317
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiainePhysicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2018-01-24T13:15:05Z
dc.type.coarjournal article
dc.description.reviewstatuspeerReviewed
dc.relation.issn0734-2101
dc.relation.numberinseries2
dc.relation.volume36
dc.type.versionpublishedVersion
dc.rights.copyright© AIP Publishing, 2018. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.subject.ysooptiset ominaisuudet
dc.subject.ysoihotautioppi
dc.subject.ysoatomikerroskasvatus
jyx.subject.urihttp://www.yso.fi/onto/yso/p25870
jyx.subject.urihttp://www.yso.fi/onto/yso/p11801
jyx.subject.urihttp://www.yso.fi/onto/yso/p27468
dc.relation.doi10.1116/1.5003381


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