Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
Bao, Y., Laitinen, M., Sajavaara, T., & Savin, H. (2017). Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation. Advanced Electronic Materials, 3(6), Article 1600491. https://doi.org/10.1002/aelm.201600491
Published inAdvanced Electronic Materials
© 2017 WILEY-VCH Verlag GmbH & Co. This is a final draft version of an article whose final and definitive form has been published by Wiley. Published in this repository with the kind permission of the publisher.
Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface passivation and thus final device operation. Heat treatments (at 400 and 800 °C) are found to be essential for high quality surface passivation similar to ALD Al2O3 deposited from conventional precursors, which is correlated with the changes at the interface and related impurity distributions. The optimal deposition temperature is found to be 250 °C, which provides the best chemical passivation after thermal treatments. ...
ISSN Search the Publication Forum2199-160X
Publication in research information system
MetadataShow full item record
Showing items with similar title or keywords.
Improved stability of black silicon detectors using aluminum oxide surface passivation Heinonen, Juha; Haarahiltunen, Antti; Kettunen, Heikki; Jaatinen, Jukka; Rossi, Mikko; Heino, Jouni; Savin, Hele; Juntunen, Mikko A. (SPIE, 2021)We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 ˚C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. ...
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies Martinella, Corinna; Alia, R. G.; Stark, R.; Coronetti, Andrea; Cazzaniga, C.; Kastriotou, M.; Kadi, Y.; Gaillard, R.; Grossner, U.; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2021)Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and ...
Low-temperature Molecular Layer Deposition Using Monofunctional Aromatic Precursors and Ozone-based Ring Opening Reactions Svärd, Laura; Putkonen, Matti; Kenttä, Eija; Sajavaara, Timo; Krahl, Fabian; Karppinen, Maarit; Kerckhove, Kevin Van de; Detavernier, Christophe; Simell, Pekka (American Chemical Society, 2017)Molecular layer deposition (MLD) is an increasingly used deposition technique for producing thin coatings consisting of purely organic or hybrid inorganic–organic materials. When organic materials are prepared, low deposition ...
Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone Klesko, Joseph P.; Bellow, James A.; Saly, Mark J.; Winter, Charles H.; Julin, Jaakko; Sajavaara, Timo (American Institute of Physics; American Vacuum Society, 2016)The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp ¼ tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of ...
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S.; Arslanbekov, R. R. (IEEE, 2020)The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated ...