Characterization of ALD grown TixAlyN and TixAlyC thin films
Kinnunen, S., Malm, J., Arstila, K., Lahtinen, M., & Sajavaara, T. (2017). Characterization of ALD grown TixAlyN and TixAlyC thin films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406 (Part A), 152-155. doi:10.1016/j.nimb.2016.12.032
Published inNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
© 2017 Elsevier Ltd. This is a pre-print version of an article whose final and definitive form has been published by Elsevier. Published in this repository with the kind permission of the publisher.
Atomic layer deposition (ALD) was used to grow TixAlyN and TixAlyC thin films using trimethylaluminum (TMA), titanium tetrachloride and ammonia as precursors. Deposition temperature was varied between 325 °C and 500 °C. Films were also annealed in vacuum and N2-atmosphere at 600–1000 °C. Wide range of characterization methods was used including time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray diffractometry (XRD), X-ray reflectometry (XRR), Raman spectroscopy, ellipsometry, helium ion microscopy (HIM), atomic force microscopy (AFM) and 4-point probe measurement for resistivity. Deposited films were roughly 100 nm thick and contained mainly desired elements. Carbon, chlorine and hydrogen were found to be the main impurities.