Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
Broas, M., Jiang, H., Graff, A., Sajavaara, T., Vuorinen, V., & Paulasto-Kröckel, M. (2017). Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films. Applied Physics Letters, 111 (14), 141606. doi:10.1063/1.4994974
Published inApplied Physics Letters
© AIP Publishing, 2017. Published in this repository with the kind permission of the publisher.
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stressdriven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress- and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films.