Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
Broas, M., Jiang, H., Graff, A., Sajavaara, T., Vuorinen, V., & Paulasto-Kröckel, M. (2017). Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films. Applied Physics Letters, 111(14), Article 141606. https://doi.org/10.1063/1.4994974
Julkaistu sarjassa
Applied Physics LettersTekijät
Päivämäärä
2017Tekijänoikeudet
© AIP Publishing, 2017. Published in this repository with the kind permission of the publisher.
Blistering of protective, structural, and functional coatings is a reliability risk pestering films
ranging from elemental to ceramic ones. The driving force behind blistering comes from either
excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stressdriven
mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in
the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on
the substrate. The stress- and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films
are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution
microscopy and show that at least two distinct mechanisms can cause blistering in ALD films.
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0003-6951Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/27268075
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