Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
Abstract
Blistering of protective, structural, and functional coatings is a reliability risk pestering films
ranging from elemental to ceramic ones. The driving force behind blistering comes from either
excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stressdriven
mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in
the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on
the substrate. The stress- and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films
are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution
microscopy and show that at least two distinct mechanisms can cause blistering in ALD films.
Main Authors
Format
Articles
Research article
Published
2017
Series
Subjects
Publication in research information system
Publisher
AIP Publishing LLC
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201710053944Use this for linking
Review status
Peer reviewed
ISSN
0003-6951
DOI
https://doi.org/10.1063/1.4994974
Language
English
Published in
Applied Physics Letters
Citation
- Broas, M., Jiang, H., Graff, A., Sajavaara, T., Vuorinen, V., & Paulasto-Kröckel, M. (2017). Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films. Applied Physics Letters, 111(14), Article 141606. https://doi.org/10.1063/1.4994974
Copyright© AIP Publishing, 2017. Published in this repository with the kind permission of the publisher.