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Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

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Broas, M., Jiang, H., Graff, A., Sajavaara, T., Vuorinen, V., & Paulasto-Kröckel, M. (2017). Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films. Applied Physics Letters, 111(14), Article 141606. https://doi.org/10.1063/1.4994974
Published in
Applied Physics Letters
Authors
Broas, Mikael |
Jiang, Hua |
Graff, Andreas |
Sajavaara, Timo |
Vuorinen, Vesa |
Paulasto-Kröckel, Mervi
Date
2017
Discipline
KiihdytinlaboratorioAccelerator Laboratory
Copyright
© AIP Publishing, 2017. Published in this repository with the kind permission of the publisher.

 
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stressdriven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress- and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films.
Publisher
AIP Publishing LLC
ISSN Search the Publication Forum
0003-6951
Keywords
piezoelectric films ihotautioppi keramiikka mikroskopia ohutkalvot
DOI
https://doi.org/10.1063/1.4994974
URI

http://urn.fi/URN:NBN:fi:jyu-201710053944

Publication in research information system

https://converis.jyu.fi/converis/portal/detail/Publication/27268075

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  • Matemaattis-luonnontieteellinen tiedekunta [4977]

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