Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
Bagatin, M., Gerardin, S., Paccagnella, A., Visconti, A., Virtanen, A., Kettunen, H., Costantino, A., Ferlet-Cavrois, V., & Zadeh, A. (2017). Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. IEEE Transactions on Nuclear Science, 64(1), 464-470. https://doi.org/10.1109/TNS.2016.2637571
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IEEE Transactions on Nuclear ScienceDate
2017Copyright
© 2017 IEEE. This is an author's final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
Floating gate cells in advanced NAND Flash
memories, with single-level and multi-level cell architecture, were
exposed to low-energy proton beams. The first experimental
evidence of single event upsets by proton direct ionization in
floating gate cells is reported. The dependence of the error
rate versus proton energy is analyzed in a wide energy range.
Proton direct ionization events are studied and energy loss in
the overlayers is discussed. The threshold LET for floating gate
errors in multi-level and single-level cell devices is modeled and
technology scaling trends are analyzed, also discussing the impact
of the particle track size.
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