Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
Abstract
Floating gate cells in advanced NAND Flash
memories, with single-level and multi-level cell architecture, were
exposed to low-energy proton beams. The first experimental
evidence of single event upsets by proton direct ionization in
floating gate cells is reported. The dependence of the error
rate versus proton energy is analyzed in a wide energy range.
Proton direct ionization events are studied and energy loss in
the overlayers is discussed. The threshold LET for floating gate
errors in multi-level and single-level cell devices is modeled and
technology scaling trends are analyzed, also discussing the impact
of the particle track size.
Main Authors
Format
Articles
Research article
Published
2017
Series
Subjects
Publication in research information system
Publisher
IEEE
The permanent address of the publication
https://urn.fi/URN:NBN:fi:jyu-201706273067Käytä tätä linkitykseen.
Review status
Peer reviewed
ISSN
0018-9499
DOI
https://doi.org/10.1109/TNS.2016.2637571
Language
English
Published in
IEEE Transactions on Nuclear Science
Citation
- Bagatin, M., Gerardin, S., Paccagnella, A., Visconti, A., Virtanen, A., Kettunen, H., Costantino, A., Ferlet-Cavrois, V., & Zadeh, A. (2017). Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. IEEE Transactions on Nuclear Science, 64(1), 464-470. https://doi.org/10.1109/TNS.2016.2637571
License
Copyright© 2017 IEEE. This is an author's final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.