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dc.contributor.authorAndreou, Charalambos M.
dc.contributor.authorJavanainen, Arto
dc.contributor.authorRominski, Adrian
dc.contributor.authorVirtanen, Ari
dc.contributor.authorLiberali, Valentino
dc.contributor.authorCalligaro, Cristiano
dc.contributor.authorProkofiev, Alexander V.
dc.contributor.authorGerardin, Simone
dc.contributor.authorBagatin, Marta
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorGonzález-Castaño, Diego M.
dc.contributor.authorGómez, Faustino
dc.contributor.authorNahmad, Daniel
dc.contributor.authorGeorgiou, Julius
dc.date.accessioned2017-05-02T11:15:22Z
dc.date.available2017-05-02T11:15:22Z
dc.date.issued2016
dc.identifier.citationAndreou, C. M., Javanainen, A., Rominski, A., Virtanen, A., Liberali, V., Calligaro, C., . . . Georgiou, J. (2016). Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications. <em>IEEE Transactions on Nuclear Science</em>, 63 (6), 2950-2961. <a href="https://doi.org/10.1109/TNS.2016.2611639">doi:10.1109/TNS.2016.2611639</a>
dc.identifier.otherTUTKAID_72963
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/53735
dc.description.abstractAn architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 μm CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofseriesIEEE Transactions on Nuclear Science
dc.subject.othermicroelectronics
dc.subject.otherspace applications
dc.subject.otheranalog integrated circuits
dc.subject.othercircuit topology
dc.subject.othersingle event transients
dc.subject.otherreference voltage
dc.titleSingle Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201704272106
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2017-04-27T12:15:04Z
dc.type.coarjournal article
dc.description.reviewstatuspeerReviewed
dc.format.pagerange2950-2961
dc.relation.issn0018-9499
dc.relation.volume63
dc.type.versionacceptedVersion
dc.rights.copyright© 2016 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.relation.doi10.1109/TNS.2016.2611639


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