Studies on atomic layer deposition of IRMOF-8 thin films
Salmi, L., Heikkilä, M., Vehkamäki, M., Puukilainen, E., Ritala, M., & Sajavaara, T. (2015). Studies on atomic layer deposition of IRMOF-8 thin films. Journal of Vacuum Science and Technology A, 33(1), Article 01A121. https://doi.org/10.1116/1.4901455
Published inJournal of Vacuum Science and Technology A
© 2014 American Vacuum Society. Published by AIP. Published in this repository with the kind permission of the publisher.
Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOFERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd)2 (thd ¼ 2,2,6,6-tetramethyl-3, 5-heptanedionato) as the precursor. ...
PublisherAmerican Institute of Physics
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