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dc.contributor.authorPuustinen, J.
dc.contributor.authorWu, M.
dc.contributor.authorLuna, E.
dc.contributor.authorSchramm, A.
dc.contributor.authorLaukkanen, Pia
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSajavaara, Timo
dc.contributor.authorGuina, M.
dc.date.accessioned2016-01-22T12:33:19Z
dc.date.available2016-01-22T12:33:19Z
dc.date.issued2013
dc.identifier.citationPuustinen, J., Wu, M., Luna, E., Schramm, A., Laukkanen, P., Laitinen, M., Sajavaara, T., & Guina, M. (2013). Variation of lattice constant and cluster formation in GaAsBi. <i>Journal of Applied Physics</i>, <i>114</i>(24), Article 243504. <a href="https://doi.org/10.1063/1.4851036" target="_blank">https://doi.org/10.1063/1.4851036</a>
dc.identifier.otherCONVID_23251876
dc.identifier.otherTUTKAID_60833
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/48436
dc.description.abstractWe investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within AsGa antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.
dc.languageeng
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJournal of Applied Physics
dc.subject.otherion beam analysis
dc.titleVariation of lattice constant and cluster formation in GaAsBi
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201601221246
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiainePhysicsen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2016-01-22T07:15:05Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.relation.issn0021-8979
dc.relation.numberinseries24
dc.relation.volume114
dc.type.versionpublishedVersion
dc.rights.copyright© 2013 AIP Publishing LLC. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.subject.ysooptoelektroniikka
jyx.subject.urihttp://www.yso.fi/onto/yso/p10992
dc.relation.doi10.1063/1.4851036
dc.type.okmA1


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