Self- and impurity diffusion in intrinsic relaxed silicon-germanium

• Artikkeli I Laitinen, P., Touboltsev, V., Tyurin, G., & Räisänen, J. (2002). Detection system for depth profiling of radiotracers. Nuclear Instruments and Methods, B 190, 183. DOI: 10.1016/s0168-583x(01)01205-8
• Laitinen, P., Nevala, M., Pirojenko, A., Ranttila, K., Seppälä, R., Riihimäki, I., Räisänen, J., & Virtanen, A. (2004). Utilisation of a sputtering device for targetry and diffusion studies. Nuclear Instruments and Methods in Physics Research. Section B, 226(3), 441-446. DOI: 10.1016/j.nimb.2004.06.027
• Artikkeli III: Strohm, A., Voss, T., Frank, W., Laitinen, P., & Räisänen, J. (2002). Self-diffusion of 71Ge and 31Si in Si-Ge alloys. Zeitschrift für Metallkunde, 93, 737. DOI: 10.3139/146.020737
• Artikkeli IV: Räisänen, J., Dendooven, P., Laitinen, P., Huikari, J., Nieminen, A., Riihimäki, I., Äystö, J., Strohm, A., Grodon, C., & Frank, W. (2002). Self-Diffusion of 31Si and 71Ge in relaxed Si0.20Ge0.80 layers. Physical review letters, 89, Article 085902. DOI: 10.1103/PhysRevLett.89.085902
• Artikkeli V: Laitinen, P., Riihimäki, I., Räisänen, J., & Collaboration, I. (2003). Arsenic diffusion in relaxed SiGe. Physical Review B, 68, 155209. DOI: 10.1103/PhysRevB.68.155209

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