Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Javanainen, A., Turowski, M., Galloway, K. F., Nicklaw, C., Ferlet-Cavrois, V., Bosser, A., Lauenstein, J.-M., Muschitiello, M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(8), 2031-2037. https://doi.org/10.1109/TNS.2017.2717045
Julkaistu sarjassa
IEEE Transactions on Nuclear ScienceTekijät
Päivämäärä
2017Tekijänoikeudet
© 2017 IEEE. This is a final draft version of an article whose final and definitive form has been published by IEEE. Published in this repository with the kind permission of the publisher.
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Julkaisija
Institute of Electrical and Electronics EngineersISSN Hae Julkaisufoorumista
0018-9499Asiasanat
Julkaisu tutkimustietojärjestelmässä
https://converis.jyu.fi/converis/portal/detail/Publication/27080889
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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; Virtanen, Ari (Institute of Electrical and Electronics Engineers, 2017)Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy ... -
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; Javanainen, A.; Lauenstein, J-M. (IEEE, 2020)Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible ... -
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. (Institute of Electrical and Electronics Engineers, 2018)Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to ... -
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation
Roed, Ketil; Eriksen, Dag Oistein; Ceccaroli, Bruno; Martinella, Corinna; Javanainen, Arto; Reshanov, Sergey; Massetti, Silvia (Institute of Electrical and Electronics Engineers (IEEE), 2022)The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as ... -
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
Niskanen, Kimmo; Kettunen, Heikki; Lahti, Mikko; Rossi, Mikko; Jaatinen, Jukka; Söderström, Daniel; Javanainen, Arto (Institute of Electrical and Electronics Engineers (IEEE), 2023)The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ...
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