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dc.contributor.authorNapari, Mari
dc.contributor.authorLahtinen, Manu
dc.contributor.authorVeselov, Alexey
dc.contributor.authorJulin, Jaakko
dc.contributor.authorØstreng, Erik
dc.contributor.authorSajavaara, Timo
dc.date.accessioned2017-08-08T07:33:44Z
dc.date.available2019-07-25T21:36:01Z
dc.date.issued2017
dc.identifier.citationNapari, M., Lahtinen, M., Veselov, A., Julin, J., Østreng, E., & Sajavaara, T. (2017). Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configuration. <i>Surface and Coatings Technology</i>, <i>326</i>(Part A, October), 281-290. <a href="https://doi.org/10.1016/j.surfcoat.2017.07.056" target="_blank">https://doi.org/10.1016/j.surfcoat.2017.07.056</a>
dc.identifier.otherCONVID_27135356
dc.identifier.otherTUTKAID_74534
dc.identifier.urihttps://jyx.jyu.fi/handle/123456789/55011
dc.description.abstractRoom-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observed to be similar on silicon, polycarbonate and poly(methyl methacrylate) substrates, but changes in polymer surface morphology indicate plasma-induced damage during the deposition due to exposure to ion bombardment when direct plasma was applied.
dc.language.isoeng
dc.publisherElsevier Sequoia
dc.relation.ispartofseriesSurface and Coatings Technology
dc.subject.otherplasma-enhanced atomic layer deposition
dc.subject.otherinductively-coupled plasma
dc.subject.othercapacitively-coupled plasma
dc.titleRoom-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configuration
dc.typearticle
dc.identifier.urnURN:NBN:fi:jyu-201708043412
dc.contributor.laitosFysiikan laitosfi
dc.contributor.laitosKemian laitosfi
dc.contributor.laitosDepartment of Physicsen
dc.contributor.laitosDepartment of Chemistryen
dc.contributor.oppiaineFysiikkafi
dc.contributor.oppiaineEpäorgaaninen ja analyyttinen kemiafi
dc.contributor.oppiaineKiihdytinlaboratoriofi
dc.contributor.oppiainePhysicsen
dc.contributor.oppiaineInorganic and Analytical Chemistryen
dc.contributor.oppiaineAccelerator Laboratoryen
dc.type.urihttp://purl.org/eprint/type/JournalArticle
dc.date.updated2017-08-04T06:15:15Z
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1
dc.description.reviewstatuspeerReviewed
dc.format.pagerange281-290
dc.relation.issn0257-8972
dc.relation.numberinseriesPart A, October
dc.relation.volume326
dc.type.versionacceptedVersion
dc.rights.copyright© 2017 Elsevier B.V. This is a final draft version of an article whose final and definitive form has been published by Elsevier. Published in this repository with the kind permission of the publisher.
dc.rights.accesslevelopenAccessfi
dc.subject.ysosinkkioksidi
jyx.subject.urihttp://www.yso.fi/onto/yso/p27694
dc.relation.doi10.1016/j.surfcoat.2017.07.056
dc.type.okmA1


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